Semiconductor memory device and method of manufacturing the same

摘要

According to one embodiment, a semiconductor substrate device includes a plurality of memory elements formed on the top surface of a semiconductor substrate, interlayer insulating films buried between the adjacent memory elements, a protection film formed on sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements, and contacts formed in the interlayer insulating films. The protection film includes a first protection film formed on the sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements and a second protection film formed on the first protection film. The first protection film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and the second protection film is made of a boron film or a boron nitride film.

主权项

1. A semiconductor memory device comprising:
a plurality of memory elements formed on a top surface of a semiconductor substrate; an interlayer insulating film buried between the adjacent memory elements; a protection film continuously formed on sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements; and a contact formed in the interlayer insulating film, wherein the protection film includes: a first protection film formed on the sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements, the first protection film being made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film; and a second protection film formed on the first protection film, the second protection film being made of a boron film or a boron nitride film.