发明名称 |
Selective epitaxial growth of semiconductor materials with reduced defects |
摘要 |
A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material. |
申请公布号 |
US8796758(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201213686708 |
申请日期 |
2012.11.27 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Jing-Cheng;Yu Chen-Hua |
分类号 |
H01L21/02;H01L21/762;H01L29/267;H01L29/165 |
主分类号 |
H01L21/02 |
代理机构 |
Slater and Matsil, L.L.P. |
代理人 |
Slater and Matsil, L.L.P. |
主权项 |
1. A device comprising:
a first semiconductor layer of a first semiconductor material; a first insulator layer disposed on the first semiconductor layer; and a semiconductor region having a first portion disposed in the first insulator layer and a second portion disposed in the first semiconductor layer, the second portion in contact with the first portion and having a width greater than a width of the first portion, and the first portion of a second semiconductor material different from the first semiconductor material. |
地址 |
Hsin-Chu TW |