Method and apparatus for sensing infrared radiation

摘要

Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.

主权项

1. A device for sensing infrared (IR) radiation, comprising:
a first electrode; an organic infrared (IR) sensing layer, wherein a first end of the organic IR sensing layer is in contact with the first electrode; a first organic light emitting device (OLED), wherein the first OLED comprises a first phosphorescent emitter, wherein a first end of the first OLED is in contact with a second end of the organic IR sensing layer; a first charge separation layer, wherein a first end of the first charge separation layer is in contact with a second end of the first OLED; a second OLED, wherein the second OLED comprises a second phosphorescent emitter, wherein a first end of the second OLED is in contact with a second end of the first charge separation layer; and a second electrode, wherein the second electrode is in contact with a second end of the second OLED; wherein when a potential is applied between the first and second electrodes and the organic IR sensing layer is exposed to IR radiation a sensing electron and a sensing hole are generated in the organic IR sensing layer and a first hole and a first electron are generated in the first charge separation layer, wherein one of the first hole and the first electron is passed to the first OLED, wherein one of the sensing electron and the sensing hole generated in the organic IR sensing layer is passed into the first OLED and combines with the one of the first hole and the first electron, respectively, in the first OLED to produce a first emitted photon, wherein another of the first hole and the first electron generated in the first charge separation layer is passed to the second OLED and combines with a corresponding electron or hole passed into the second OLED to produce a second emitted photon.