ALD of metal-containing films using cyclopentadienyl compounds

摘要

Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

主权项

1. An atomic layer deposition (ALD) process for producing metal containing thin films comprising alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of at least one volatile metal containing cyclopentadienyl compound and a second reactant at a temperature that is low enough to prevent decomposition of the cyclopentadienyl compound and the second reactant, wherein the metal containing cyclopentadienyl compound comprises a metal with a trivalent oxidation state, wherein said cyclopentadienyl compound does not contain a metal directly bonded to a halide or oxygen atom, and wherein the metal containing cyclopentadienyl compound has the formula: (R1R2R3R4R5Cp)x-MR0z—(NR1R2)y wherein M is titanium; wherein each R1, R2, R3, R4, R5, and R0 is independently selected from: (i) hydrogen; (ii) linear and branched C1-C20 alkyl, alkenyl and alkynyl groups, which are independently substituted or unsubstituted; (iii) carbocyclic groups, such as aryl, phenyl, cyclopentadienyl, alkylaryl, and halogenated carbocyclic groups; and (iv) heterocyclic groups; and wherein both x and y are ≧1 and z≧0.