发明名称 |
Organic light emitting display |
摘要 |
An organic light emitting display (OLED) is disclosed. The OLED includes a storage capacitor formed in a first region of the substrate, a thin film transistor formed in a second region of the substrate, a first data line capacitor formed in a third region of the substrate, an organic light emitting diode formed on the storage capacitor and the thin film transistor, and a second data line capacitor formed on the data line capacitor. |
申请公布号 |
US8797238(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201113007371 |
申请日期 |
2011.01.14 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kwak Won-Kyu;Kim Yang-Wan |
分类号 |
G09G3/30 |
主分类号 |
G09G3/30 |
代理机构 |
Knobbe Martens Olson & Bear LLP |
代理人 |
Knobbe Martens Olson & Bear LLP |
主权项 |
1. An organic light emitting display (OLED) comprising:
a substrate; a storage capacitor region, a thin film transistor region, and a data line capacitor region each formed on the substrate; a storage capacitor formed in the storage capacitor region, the storage capacitor comprising:
a first semiconductor layer formed on the substrate;a gate insulating layer formed on the first semiconductor layer;a first electrode formed on the gate insulating layer;an interlayer insulating layer formed on the first electrode; anda second electrode formed on the interlayer insulating layer, wherein the second electrode is electrically connected to the first semiconductor layer; a thin film transistor formed in the thin film transistor region, the thin film transistor comprising:
a second semiconductor layer formed on the substrate;a gate insulating layer formed on the second semiconductor layer;a gate electrode formed on the gate insulating layer;a source electrode formed on the gate insulating layer; anda drain electrode formed on the gate insulating layer; a first data line capacitor formed in the data line capacitor region, the first data line capacitor comprising:
a third semiconductor layer formed on the substrate;a gate insulating layer formed on the third semiconductor layer;an interlayer insulating layer formed on the gate insulating layer; anda data line formed on the interlayer insulating layer; an organic light emitting diode formed on the storage capacitor and the thin film transistor and comprising:
a pixel electrode connected to one of the source and drain electrodes;an organic emission layer formed on the pixel electrode; andan opposite electrode formed on the storage capacitor, the thin film transistor, and the first data line capacitor; and a second data line capacitor formed on the data line capacitor region, the second data line capacitor comprising:
the data line;an insulating layer formed over the data line; andthe opposite electrode, the opposite electrode formed over at least part of the insulating layer. |
地址 |
Yongin, Gyeonggi-Do KR |