发明名称 Organic light emitting display
摘要 An organic light emitting display (OLED) is disclosed. The OLED includes a storage capacitor formed in a first region of the substrate, a thin film transistor formed in a second region of the substrate, a first data line capacitor formed in a third region of the substrate, an organic light emitting diode formed on the storage capacitor and the thin film transistor, and a second data line capacitor formed on the data line capacitor.
申请公布号 US8797238(B2) 申请公布日期 2014.08.05
申请号 US201113007371 申请日期 2011.01.14
申请人 Samsung Display Co., Ltd. 发明人 Kwak Won-Kyu;Kim Yang-Wan
分类号 G09G3/30 主分类号 G09G3/30
代理机构 Knobbe Martens Olson & Bear LLP 代理人 Knobbe Martens Olson & Bear LLP
主权项 1. An organic light emitting display (OLED) comprising: a substrate; a storage capacitor region, a thin film transistor region, and a data line capacitor region each formed on the substrate; a storage capacitor formed in the storage capacitor region, the storage capacitor comprising: a first semiconductor layer formed on the substrate;a gate insulating layer formed on the first semiconductor layer;a first electrode formed on the gate insulating layer;an interlayer insulating layer formed on the first electrode; anda second electrode formed on the interlayer insulating layer, wherein the second electrode is electrically connected to the first semiconductor layer; a thin film transistor formed in the thin film transistor region, the thin film transistor comprising: a second semiconductor layer formed on the substrate;a gate insulating layer formed on the second semiconductor layer;a gate electrode formed on the gate insulating layer;a source electrode formed on the gate insulating layer; anda drain electrode formed on the gate insulating layer; a first data line capacitor formed in the data line capacitor region, the first data line capacitor comprising: a third semiconductor layer formed on the substrate;a gate insulating layer formed on the third semiconductor layer;an interlayer insulating layer formed on the gate insulating layer; anda data line formed on the interlayer insulating layer; an organic light emitting diode formed on the storage capacitor and the thin film transistor and comprising: a pixel electrode connected to one of the source and drain electrodes;an organic emission layer formed on the pixel electrode; andan opposite electrode formed on the storage capacitor, the thin film transistor, and the first data line capacitor; and a second data line capacitor formed on the data line capacitor region, the second data line capacitor comprising: the data line;an insulating layer formed over the data line; andthe opposite electrode, the opposite electrode formed over at least part of the insulating layer.
地址 Yongin, Gyeonggi-Do KR