| 发明名称 | Negative photoresist composition and patterning method for device | ||
| 摘要 | The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent. | ||
| 申请公布号 | US8795943(B2) | 申请公布日期 | 2014.08.05 |
| 申请号 | US201113100773 | 申请日期 | 2011.05.04 |
| 申请人 | LG Chem, Ltd. | 发明人 | Park Chan-Hyo;Kim Kyung-Jun;Kim Yu-Na |
| 分类号 | G03F7/00;G03F7/004;G03F7/40 | 主分类号 | G03F7/00 |
| 代理机构 | Rothwell, Figg, Ernst & Manbeck, P.C. | 代理人 | Rothwell, Figg, Ernst & Manbeck, P.C. |
| 主权项 | 1. A negative photoresist composition comprising: an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; a speed enhancer comprises a phenol novolac-based compound represented by Formula 6:wherein l represents a degree of polymerization of a repeating unit and ranges from 2 to 10; and a solvent. | ||
| 地址 | Seoul KR | ||