发明名称 Methods of fabricating substrates
摘要 A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.
申请公布号 US8796155(B2) 申请公布日期 2014.08.05
申请号 US200812328448 申请日期 2008.12.04
申请人 Micron Technology, Inc. 发明人 Sills Scott;Sandhu Gurtej S.;deVilliers Anton
分类号 H01L21/302 主分类号 H01L21/302
代理机构 Wells St. John, P.S. 代理人 Wells St. John, P.S.
主权项 1. A method of fabricating a substrate, comprising: forming spaced first features over a substrate, the spaced first features having elevationally coincident bases; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features; depositing a first material over the altered material, the first material being of some different composition from that of the altered material and having an elevationally innermost base that is elevationally coincident with the bases of the spaced first features; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
地址 Boise ID US