发明名称 APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION
摘要 Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
申请公布号 KR20140096308(A) 申请公布日期 2014.08.05
申请号 KR20147013930 申请日期 2012.11.08
申请人 APPLIED MATERIALS, INC. 发明人 PAN HENG;ROGERS MATTHEW SCOTT;HUNTER AARON MUIR;MOFFATT STEPHEN
分类号 H01L21/66 主分类号 H01L21/66
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