Method of optimizing a GA—nitride device material structure for a frequency multiplication device

摘要

A preferred method of optimizing a Ga-nitride device material structure for a frequency multiplication device comprises:
determining the amplitude and frequency of the input signal being multiplied in frequency;providing a Ga-nitride region on a substrate;determining the Al percentage composition and impurity doping in an AlGaN region positioned on the Ga-nitride region based upon the power level and waveform of the input signal and the desired frequency range in order to optimize power input/output efficiency; andselecting an orientation of N-face polar GaN or Ga-face polar GaN material relative to the AlGaN/GaN interface so as to orient the face of the GaN so as to optimize charge at the AlGaN/GaN interface. A preferred embodiment comprises an anti-serial Schottky varactor comprising: two Schottky diodes in anti-serial connection; each comprising at least one GaN layer designed based upon doping and thickness to improve the conversion efficiency.

主权项

1. A method of optimizing a Ga-nitride device material structure for a frequency multiplication device comprising the following steps not necessarily in sequential order:
determining the amplitude and frequency of the input signal being multiplied in frequency; providing a substrate; providing a Ga-nitride region on a the substrate; determining a percentage composition of Al in an AlGaN region to be positioned on the Ga-nitride region by selecting an aluminum composition percentage and doping based upon the desired frequency range for the frequency multiplication device in order to optimize power input/output efficiency; and selecting an orientation of N-face polar GaN or Ga-face polar GaN material relative to the AlGaN/GaN interface so as to orient the face of the GaN so as to optimize charge at the AlGaN/GaN interface.