Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structure

摘要

A low leakage, low capacitance diode based triggered electrostatic discharge (ESD) silicon controlled rectifiers (SCR), methods of manufacture and design structure are provided. The method includes providing a silicon film on an insulator layer. The method further includes forming isolation regions which extend from an upper side of the silicon layer to the insulator layer. The method further includes forming one or more diodes in the silicon layer, including a p+ region and an n+ region formed in a well bordered by the isolation regions. The isolation regions isolate the one or more diodes in a vertical direction and the insulator layer isolates the one or more diodes from an underlying P or N type substrate, in a horizontal direction.

主权项

1. A method comprising:
providing a silicon film on an insulator layer; forming isolation regions which extend from an upper side of the silicon film to contact a surface of the insulator layer; and forming a plurality of diodes in the silicon film, each of the diodes including a p+ region and an n+ region formed in a well bordered by the isolation regions, wherein the isolation regions isolate each of the plurality of diodes from one another in a vertical direction and the insulator layer isolates the plurality of diodes from an underlying P or N type substrate, in a horizontal direction.