| 发明名称 |
Laser cooling of modified SOI wafer |
| 摘要 |
A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling. |
| 申请公布号 |
US8794010(B2) |
申请公布日期 |
2014.08.05 |
| 申请号 |
US201012966394 |
申请日期 |
2010.12.13 |
| 申请人 |
Translucent, Inc. |
发明人 |
Williams David L.;Clark Andrew;Lebby Michael |
| 分类号 |
H01S3/30;H01S3/034;F25B23/00;F25B21/00 |
主分类号 |
H01S3/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A laser cooling system comprising:
an REO layer of single crystal rare earth oxide including at least one rare earth element; light guiding structure positioned on the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence; and an active layer of single crystal semiconductor material positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling. |
| 地址 |
Palo Alto CA US |
