Semiconductor memory device

摘要

A semiconductor memory device comprises: a semiconductor substrate; a plurality of memory units provided on the semiconductor substrate and each including a plurality of memory cells that are stacked; and a plurality of bit lines formed above each of a plurality of the memory units aligned in a column direction, an alignment pitch in a row direction of the plurality of bit lines being less than an alignment pitch in the row direction of the memory units, and an end of each of the memory units aligned in the column direction being connected to one of the plurality of bit lines formed above the plurality of the memory units aligned in the column direction.

主权项

1. A semiconductor memory device, comprising:
a semiconductor substrate; memory units including memory cells that are stacked above the semiconductor substrate, the memory units including a first memory unit, a second memory unit, and a third memory unit, the second memory unit being adjacent to the first memory unit in a first direction, the third memory unit being adjacent to the first memory unit in a second direction perpendicular to the first direction; and bit lines disposed above the memory units, the bit lines extending in the second direction, the bit lines including a first bit line and a second bit line, the second bit line being adjacent to the first bit line in the first direction, wherein a first pitch is larger than a second pitch, the first pitch being a distance between the first memory unit and the second memory unit, the second pitch being a distance between the first bit line and the second bit line.