High frequency integrated circuit

摘要

A high frequency integrated circuit equipped with an electrostatic protection device provided with a field effect transistor as an electrostatic protection device at the input and output of a high frequency integrated circuit, having excellent high frequency characteristics, and making an ESD withstand voltage large, having a high frequency circuit 11 having input/output terminals and an enhancement type field effect transistor 13 formed on a compound semiconductor substrate and provided in said high frequency circuit, having one terminal of the input/output terminals connected to the input/output terminals of the high frequency circuit, having the other terminal connected to a first reference potential, and having a gate connected via a resistor 14 to a second reference potential, and making an impedance of the field effect transistor 13 low for ESD protection when noise or a high voltage pulse is applied from the input/output terminals.

主权项

1. A high frequency integrated circuit comprising:
an enhancement type field effect transistor from the group consisting of an enhancement type high electron mobility transistor and an enhancement gate junction type field effect transistor; a depletion type field effect transistor from the group consisting of a depletion type high electron mobility transistor and a depletion gate junction type field effect transistor; a high frequency circuit on a GaAs compound semiconductor substrate, said enhancement type field effect transistor and said depletion type field effect transistor being on said compound semiconductor substrate, wherein a terminal of a capacitor is directly electrically connected to a source of the enhancement type field effect transistor and a terminal of a resistor, another terminal of the resistor being directly electrically connected to a gate of the enhancement type field effect transistor, wherein an input/output terminal of the high frequency circuit is directly electrically connected to a drain of the depletion type field effect transistor, a gate of the depletion type field effect transistor being directly electrically connected to a terminal of a different resistor, wherein a source of the depletion type field effect transistor is directly electrically connected to another terminal of the capacitor and a drain of the enhancement type field effect transistor, said drain of the enhancement type field effect transistor being electrically connectable to said input/output terminal of the high frequency circuit, wherein an active device is within said high frequency circuit, a passive device being within said high frequency circuit.