发明名称 |
Technique to modify the microstructure of semiconducting materials |
摘要 |
A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material. |
申请公布号 |
US8796687(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201113236068 |
申请日期 |
2011.09.19 |
申请人 |
Corning Incorporated |
发明人 |
Cook Glen Bennett;Mazumder Prantik;Patil Mallanagouda Dyamanagouda;Tian Lili;Venkataraman Natesan |
分类号 |
H01L29/04;C30B28/06;C30B29/06;C30B11/00;C30B13/24 |
主分类号 |
H01L29/04 |
代理机构 |
|
代理人 |
Russell Michael W. |
主权项 |
1. A particle-coated semiconductor sheet, comprising:
a sheet of semiconducting material having opposing major surfaces; a sinterable first particle layer formed over each major surface; and a second particle layer formed over each of the sinterable first particle layers, wherein the sinterable first particle layers comprise functionalized particles, said functionalized particles comprising a dopant selected from the group consisting of boron, phosphorus and gallium. |
地址 |
Corning NY US |