发明名称 Technique to modify the microstructure of semiconducting materials
摘要 A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material.
申请公布号 US8796687(B2) 申请公布日期 2014.08.05
申请号 US201113236068 申请日期 2011.09.19
申请人 Corning Incorporated 发明人 Cook Glen Bennett;Mazumder Prantik;Patil Mallanagouda Dyamanagouda;Tian Lili;Venkataraman Natesan
分类号 H01L29/04;C30B28/06;C30B29/06;C30B11/00;C30B13/24 主分类号 H01L29/04
代理机构 代理人 Russell Michael W.
主权项 1. A particle-coated semiconductor sheet, comprising: a sheet of semiconducting material having opposing major surfaces; a sinterable first particle layer formed over each major surface; and a second particle layer formed over each of the sinterable first particle layers, wherein the sinterable first particle layers comprise functionalized particles, said functionalized particles comprising a dopant selected from the group consisting of boron, phosphorus and gallium.
地址 Corning NY US