| 发明名称 | Memory element and memory device | ||
| 摘要 | There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm. | ||
| 申请公布号 | US8796657(B2) | 申请公布日期 | 2014.08.05 |
| 申请号 | US201213370428 | 申请日期 | 2012.02.10 |
| 申请人 | Sony Corporation | 发明人 | Yasuda Shuichiro;Mizuguchi Tetsuya;Shimuta Masayuki;Aratani Katsuhisa;Ohba Kazuhiro |
| 分类号 | H01L29/02 | 主分类号 | H01L29/02 |
| 代理机构 | Dentons US LLP | 代理人 | Dentons US LLP |
| 主权项 | 1. A memory element, comprising: a first electrode, a memory layer, and a second electrode in this order, wherein the memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm. | ||
| 地址 | Tokyo JP | ||