Stacked layers of nitride semiconductor and method for manufacturing the same

摘要

According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.

主权项

1. A method for manufacturing a semiconductor light emitting device, comprising:
forming a plurality of protrusions on a major surface of a substrate, the substrate not including a nitride semiconductor; forming a single crystal layer directly on the major surface of the substrate to cover the protrusions and to cause a crack in the single crystal layer; and forming a nitride semiconductor layer on the single crystal layer, the plurality of the protrusions being formed in a planar pattern, the protrusions extending in a prescribed crystal orientation of the substrate, and extending in a plurality of directions equivalent to the prescribed crystal orientation.