Thin film transistor substrate, method of fabricating the same and flat display having the same

摘要

A thin film transistor substrate and a method for fabricating the same are disclosed. A thin film transistor substrate includes a substrate comprising a plurality of grooves having different depths, respectively, to have a multi-step structure; gate and data lines alternatively crossed in the grooves to form a plurality of pixel areas; thin film transistors formed in the grooves of the substrate to be formed in cross portion of the gate and data lines, wherein active layers of the thin transistors are formed along the gate lines and gate electrodes, the active layers separated from active layers of neighboring pixel areas with the data line located there between.

主权项

1. A thin film transistor substrate comprising:
a substrate comprising a plurality of grooves having different depths, respectively, to have a multi-step structure; gate and data lines alternatively crossed in the grooves to form a plurality of pixel areas; thin film transistors formed in the grooves of the substrate to be formed in cross portion of the gate and data lines, wherein the substrate comprises first to fourth grooves having different heights, respectively, and a first horizontal surface of the substrate is exposed by the first groove and a second horizontal surface of the substrate is exposed by the second groove having a lower depth than the first groove and a third horizontal surface of the substrate is exposed by the third groove having a lower depth than the second groove and a fourth horizontal surface of the substrate is exposed by the fourth groove having a lower depth than the third groove, and the active layers of the thin transistors are formed along the gate lines and gate electrodes, and the active layers are separated from active layers of neighboring pixel areas by the first groove located on both sides of the data lines, where the first groove has inclined surface on both inner sides.