发明名称 |
APPARATUS OF CONTINUOUS CZOCHRALSKI SINGLE CRYSTAL SILICON INGOT GROWER |
摘要 |
PURPOSE: An apparatus for manufacturing a single crystal silicon ingot is provided to reuse an inner crucible by connecting the inner crucible to an upper heat shield. CONSTITUTION: A crucible (110) is installed in a chamber. An inner crucible (130) is located in the crucible. A susceptor (120) surrounds the crucible. A heater (190) heats the crucible. A heat shield (150) prevents the heat of the heater from being released. |
申请公布号 |
KR101425933(B1) |
申请公布日期 |
2014.08.05 |
申请号 |
KR20120039338 |
申请日期 |
2012.04.16 |
申请人 |
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发明人 |
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分类号 |
C30B15/00;C30B29/06;H01L21/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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