发明名称 APPARATUS OF CONTINUOUS CZOCHRALSKI SINGLE CRYSTAL SILICON INGOT GROWER
摘要 PURPOSE: An apparatus for manufacturing a single crystal silicon ingot is provided to reuse an inner crucible by connecting the inner crucible to an upper heat shield. CONSTITUTION: A crucible (110) is installed in a chamber. An inner crucible (130) is located in the crucible. A susceptor (120) surrounds the crucible. A heater (190) heats the crucible. A heat shield (150) prevents the heat of the heater from being released.
申请公布号 KR101425933(B1) 申请公布日期 2014.08.05
申请号 KR20120039338 申请日期 2012.04.16
申请人 发明人
分类号 C30B15/00;C30B29/06;H01L21/02 主分类号 C30B15/00
代理机构 代理人
主权项
地址