发明名称 |
Solar cell |
摘要 |
A solar cell, wherein contamination with an undesired impurity is suppressed, and solar cell characteristics are excellent. This solar cell is provided with: a semiconductor substrate having a photoreceiving surface and a back surface; a first semiconductor layer of a first conductivity type formed on a prescribed region of the back surface of the semiconductor substrate; a second semiconductor layer of a second conductivity type formed to extend over the back surface of the semiconductor substrate and the surface of the first semiconductor layer; and a cap layer formed between the first semiconductor layer and the second semiconductor layer, and containing no impurity of the first conductivity type. |
申请公布号 |
US8796539(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201113246021 |
申请日期 |
2011.09.27 |
申请人 |
Sanyo Electric Co., Ltd. |
发明人 |
Asaumi Toshio;Sakata Hitoshi |
分类号 |
H01L31/00;H01L31/0224 |
主分类号 |
H01L31/00 |
代理机构 |
Ditthavong & Steiner, P.C. |
代理人 |
Ditthavong & Steiner, P.C. |
主权项 |
1. A solar cell comprising:
a semiconductor substrate having a photo receiving surface and a back surface; a first semiconductor layer of a first conductivity type formed on a prescribed region of the back surface of said semiconductor substrate; a second semiconductor layer of a second conductivity type formed to extend over the back surface of said semiconductor substrate and the surface of said first semiconductor layer; and a cap layer, formed between said first semiconductor layer and said second semiconductor layer, made of a semiconductor or an insulator substantially containing no impurity of said first conductivity type, wherein the solar cell further comprises a p-side electrode and an n-side electrode directly formed on the back surface of said second semiconductor layer. |
地址 |
Osaka JP |