Wafer bonding apparatus

摘要

Provided is a wafer bonding apparatus which performs pressurization and heating and eliminates nonuniformity of wafer thickness by changing the shape of a pressurizing surface so that planarity of a wafer bonding surface is improved. The wafer bonding apparatus places a plurality of wafers to be bonded between an upper unit (101U) and a lower unit (101L), and bonds the wafers by applying pressure and heat by the upper unit and the lower unit. The wafer bonding apparatus is provided with a top plate (111), a pressure profile control module (131), and a heater section arranged between the top plate and the pressure profile control module for heating. Shape change generated on the surface of the pressure profile control module causes change of the surface of the top plate.

主权项

1. A wafer bonding apparatus comprising:
an upper unit; a lower unit; and a pressurizing unit, wherein plural wafers to be bonded are pressurized and heated between the upper unit and the lower unit, wherein at least one of the upper unit and the lower unit includes a plurality of heating modules, the plurality of heating modules being concentrically arranged such that at least one heating module is disposed at a position corresponding to the central portion of said one of the upper unit or the lower unit, and the other heating modules are circumferentially disposed in surroundings of the central portion, and each of the heating modules includes a separate heater, wherein each of the heating modules is supported such that each of the heating modules is capable of individually transmitting pressuring force when the pressurizing unit pressurizes the plural wafers through the plurality of heating modules.