| 摘要 |
A nitride semiconductor light emitting device includes a first nitride semiconductor layer, a first Al-doped nitride semiconductor buffer layer formed on the first nitride semiconductor layer, an activation layer formed on the first Al-doped nitride semiconductor buffer layer, and a second nitride semiconductor layer formed on the activation layer. Another nitride semiconductor light emitting device includes a first nitride semiconductor layer, an activation layer formed on the first nitride semiconductor layer, a second Al-doped nitride semiconductor buffer layer formed on the activation layer, and a second nitride semiconductor layer formed on the second Al-doped nitride semiconductor buffer layer. Still another nitride semiconductor light emitting device includes a first nitride semiconductor layer, a first Al-doped nitride semiconductor buffer layer formed on the first nitride semiconductor layer, an activation layer formed on the first Al-doped nitride semiconductor buffer layer, a second Al-doped nitride semiconductor buffer layer formed on the activation layer, and a second nitride semiconductor layer formed on the second Al-doped nitride semiconductor buffer layer. |
