Non-replacement gate nanomesh field effect transistor with epitixially grown source and drain

摘要

An alternating stack of two different semiconductor materials is patterned to include two pad regions and nanowire regions. A semiconductor material is laterally etched selective to another semiconductor material to form a nanomesh including suspended semiconductor nanowires. Gate dielectrics, a gate electrode, and a gate cap dielectric are formed over the nanomesh. A dielectric spacer is formed around the gate electrode. The semiconductor materials in the two pad regions and physically exposed portions of the nanomesh are removed employing the dielectric spacer and the gate cap dielectric as an etch mask. A source region and a drain region are epitaxially grown from end surfaces of the nanomesh.

主权项

1. A semiconductor structure comprising:
a plurality of semiconductor nanowires spaced from a top surface of a substrate by different distances and extending along a lengthwise direction; a plurality of gate dielectrics contacting all lengthwise surfaces of said plurality of semiconductor nanowires that extend along said lengthwise direction; a gate electrode contacting said plurality of gate dielectrics and laterally surrounding each semiconductor nanowire that is not in contact with said substrate and is included among said plurality of semiconductor nanowires; a gate spacer in physical contact with sidewall surfaces of said gate electrode; and at least one doped semiconductor material portion in contact with said plurality of semiconductor nanowires, wherein all interfaces between each of said at least one doped semiconductor material portion and said plurality of semiconductor nanowires are vertically coincident with sidewalls of said gate spacer.