Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers

摘要

A semiconductor assembly includes a first subassembly comprising a heat sink and a first patterned polymer layer disposed on a surface of the heat sink to define an exposed portion of the first surface. The exposed portion of the first surface extends radially inward along the heat sink surface from the first layer. The subassembly also includes a second patterned polymer layer disposed on a radially outer portion of the first patterned polymer layer. The first and second layers define a cell for accommodating a power semiconductor die. Solder material is disposed on the exposed portion of the heat sink surface and in the cell. A power semiconductor die is located within the cell on a radially inward portion of the first layer and thermally coupled to the heat sink by the solder material.

主权项

1. A semiconductor assembly, comprising:
a first heat sink; a first patterned polymer layer disposed on a surface of the first heat sink to define an exposed portion of the surface, said exposed portion of the surface extending radially inward along the first heat sink surface from the first patterned polymer layer; solder material disposed on the exposed portion of the surface of the first heat sink; a power semiconductor die, a bottom surface thereof located on the first patterned polymer layer and thermally coupled to the first heat sink by the solder material; a second heat sink; a second patterned polymer layer disposed on a surface of the second heat sink to define an exposed portion of the surface of the second heat sink, said exposed portion of the surface extending radially inward along the surface of the second heat sink from the second patterned polymer layer, said second patterned polymer layer defining a cell for accommodating a power semiconductor die; and a second solder material disposed on a top surface of the power semiconductor die;
wherein the power semiconductor die is further located within the cell on the radially inward portion of the second patterned polymer layer, and the power semiconductor die is thermally coupled to the second heat sink by the second solder material disposed on the top surface of the power semiconductor die.