| 发明名称 | Semiconductor structure and method for making same | ||
| 摘要 | An embodiment relates to a method of forming a semiconductor structure, comprising: forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a third semiconductor layer over the second semiconductor layer; forming an opening in the first, second and third semiconductor layers; forming a conductive region within the first, the and third semiconductor layer, the conductive region surrounding the opening, the conductive region being electrically coupled to the first semiconductor layer; forming a dielectric layer in the opening and over the conductive region; and forming a conductive layer over the dielectric layer in the opening. | ||
| 申请公布号 | US8796089(B2) | 申请公布日期 | 2014.08.05 |
| 申请号 | US201314088460 | 申请日期 | 2013.11.25 |
| 申请人 | Infineon Technologies AG | 发明人 | Wilhelm Detlef;Pfeifer Guenter;Eisener Bernd;Claeys Dieter |
| 分类号 | H01L21/8242 | 主分类号 | H01L21/8242 |
| 代理机构 | Infineon Technologies AG | 代理人 | Infineon Technologies AG |
| 主权项 | 1. A method of forming a semiconductor structure, comprising: forming a first semiconductor layer; forming a second semiconductor layer over said first semiconductor layer; forming a third semiconductor layer over said second semiconductor layer; forming an opening in said first, second and third semiconductor layers; forming a conductive region within said first, said and third semiconductor layer, said conductive region surrounding said opening, said conductive region being electrically coupled to said first semiconductor layer; forming a dielectric layer in said opening and over said conductive region; and forming a conductive layer over said dielectric layer in said opening. | ||
| 地址 | Neubiberg DE | ||