发明名称 Power amplifier device and power amplifier circuit thereof
摘要 The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.
申请公布号 US8797099(B2) 申请公布日期 2014.08.05
申请号 US201113521125 申请日期 2011.10.28
申请人 ZTE Corporation 发明人 Cui Xiaojun;Chen Huazhang;An Jinyuan;Liu Jianli
分类号 H03F3/68;H03F3/21;H03F3/60;H03F1/02 主分类号 H03F3/68
代理机构 Ling and Yang Intellectual Property 代理人 Wu Ling;Yang Stephen;Ling and Yang Intellectual Property
主权项 1. A power amplifier apparatus, comprising one or more driver stage power amplifier circuits in a series connection and a final stage power amplifier circuit connecting with an output end of last one driver stage power amplifier circuit, wherein the driver stage power amplifier circuit uses a Doherty circuit structure; wherein the apparatus is implemented in a following way: determining a model number of a power amplifier used by a final stage carrier amplifier; comparing, analyzing and determining a Doherty structure to be used; determining a model number of a power amplifier used by a final stage peak amplifier; according to gain of final stage, determining a model number of a power amplifier used by a driver stage carrier amplifier and a model number of a power amplifier used by a driver stage peak amplifier; completing a matching design of power amplifiers of the final stage and driver stage and a design for parts of power divider and power combiner in a block diagram.
地址 Shenzhen, Guangdong Province CN