Method and structure of monolithically integrated pressure sensor using IC foundry-compatible processes

摘要

A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

主权项

1. A pressure sensing device comprising:
a substrate having a surface region; a CMOS integrated circuit device layer overlying the surface region of the substrate; a diaphragm device having one or more surface regions directly overlying the CMOS integrated circuit device layer; and at least one or more spring devices spatially disposed within a vicinity of the one or more surface regions of the diaphragm device, each of the spring devices being operably coupled to the one or more surface regions of the diaphragm device.