发明名称 |
Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same |
摘要 |
An actinic ray-sensitive or radiation-sensitive resin composition, and a resist film and a pattern forming method using the composition are provided, the composition including (A) a compound capable of decomposing by the action of an acid to increase the solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a basic compound; and (D) a specific compound containing at least two specific alicyclic hydrocarbon groups each substituted with a hydroxyl group. |
申请公布号 |
US8795945(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201113521332 |
申请日期 |
2011.03.04 |
申请人 |
FUJIFILM Corporation |
发明人 |
Fujii Kana;Tomiga Takamitsu;Fujimori Toru |
分类号 |
G03F7/039;G03F7/20;G03F7/30 |
主分类号 |
G03F7/039 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. An actinic ray-sensitive or radiation-sensitive resin composition, comprising:
(A) a resin capable of decomposing by an action of an acid to increase the solubility of the resin (A) in an alkali developer, the resin (A) containing a phenolic hydroxyl group and a repeating unit having an aromatic group; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a basic compound; and (D) a compound represented by formula (D1): wherein A represents an r-valent hydrocarbon group having a carbon number of 1; R represents a hydrocarbon group and when a plurality of R's are present, the plurality of R's may be the same or different; n represents an integer of 1 to 3; m represents 1 or 2; r represents an integer of 2 to 4; and o represents an integer of 0 to 2. |
地址 |
Tokyo JP |