发明名称 Magnetic recording medium and magnetic recording medium manufacturing method
摘要 [Problem] An object is to provide a magnetic recording medium with improved HDI characteristics, such as impact resistance, and its manufacturing method.;[Solution] A typical structure of a magnetic recording medium 100 according to the present invention includes, on a base, at least a magnetic recording layer 122, a protective layer 126, and a lubricating layer 128, wherein the magnetic recording layer 122 includes, in an in-plane direction, a magnetic recording part 136 configured of a magnetic material and a non-recording part 134 magnetically separating the magnetic recording part 136, and a surface corresponding to the non-recording part 134 protuberates more than a surface corresponding to the magnetic recording part 136.
申请公布号 US8795790(B2) 申请公布日期 2014.08.05
申请号 US200913133941 申请日期 2009.12.09
申请人 WD Media (Singapore) Pte. Ltd. 发明人 Sonobe Yoshiaki;Shimada Akira;Ozawa Tsuyoshi;Aniya Masanori
分类号 C23C14/48;C23C14/58;C23C14/04;B05D5/08;B05D5/02 主分类号 C23C14/48
代理机构 代理人
主权项 1. A method of manufacturing a magnetic recording medium including, a base having thereon at least a magnetic recording layer having a magnetic recording part and a non-recording part in an in-plane direction, wherein a surface of the magnetic recording medium being above the non-recording part protuberates more than a surface of the magnetic recording medium being above the magnetic recording part, the method comprising: a magnetic recording layer forming step of forming at least one magnetic recording layer over the base; a protective layer forming step of forming a film of a protective layer made of a C-based material on the magnetic recording layer by CVD; a resist layer forming step of forming a film of a resist layer on the protective layer; a patterning step of processing the resist layer to partially change a thickness of the resist layer and form a projected part and a recessed part of a predetermined pattern; an ion implanting step of implanting ions into the magnetic recording layer through the resist layer, wherein when the ions are implanted through the recessed part of the resist layer, a surface portion of the resist layer is altered and adhered to the protective layer as a residue; a resist layer removing step of removing the resist layer by reactive ion etching, wherein the residue is left on the protective layer after the resist layer removing step, and the residue on the protective layer being above the magnetic recording part is less than the residue on the protective layer being above the non-recording part; and a non-magnetization promoting step of promoting non-magnetization of the non-recording part by immersion in an alkaline solution after the resist layer is removed.
地址 Singapore SG