| 摘要 |
Provided is a method of filling a pitcher having a high aspect ratio with tungsten without generating pores. According to various exemplary embodiments, the method includes a low-temperature chemical vapor deposition (CVD) process to fill a pitcher with tungsten. In a specific exemplary embodiment, a process temperature is maintained under about 350°C during the chemical vapor deposition process for filling the pitcher. The lower-temperature CVD tungsten filling improves tungsten filling in the pitcher having the high aspect ratio, provides an improved barrier with respect to fluorine moving to a lower layer, and achieves a thin film resistivity similar to a standard CVD filling. Also, a method for depositing a tungsten layer having a low resistivity is provided. According to various exemplary embodiments, the method includes performing a low-temperature low-resistivity process on a deposited nucleation layer before a tungsten bulk layer deposition and/or a bulk layer deposition through a low-temperature CVD process followed by a high-temperature CVD process. |
