发明名称 |
METHOD, SYSTEM, AND APPARATUS FOR GATING CONFIGURATIONS AND IMPROVED CONTACTS IN NANOWIRE-BASED ELECTRONIC DEVICES |
摘要 |
Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core. |
申请公布号 |
CA2589432(C) |
申请公布日期 |
2014.08.05 |
申请号 |
CA20052589432 |
申请日期 |
2005.10.14 |
申请人 |
NANOSYS, INC. |
发明人 |
MOSTARSHED, SHAHRIAR;CHEN, JIAN;LEON, FRANCISCO;PAN, YAOLING;ROMANO, LINDA T. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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