发明名称 |
METHODS FOR PROCESSING SUBSTRATES |
摘要 |
The present invention relates to a method for processing a substrate which includes forming a first release layer of a thermosetting property on a substrate, forming a second release layer of a thermosetting property on a carrier, combining the carrier with the substrate by providing a thermosetting bonding layer which bonds the first release layer and the second release layer between the substrate and the carrier, making the substrate thin while the carrier supports the substrate, separating the carrier from the bonding layer, removing the second release layer on the bonding layer by performing a plasma process on the bonding layer, separating the bonding layer from the thin substrate, and removing the first release layer on the thin substrate by cleaning the thin substrate. |
申请公布号 |
KR20140095824(A) |
申请公布日期 |
2014.08.04 |
申请号 |
KR20130008695 |
申请日期 |
2013.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, CHUNG SUN;KIM, JUNG HWAN;CHOI, KWANG CHUL;KANG, UN BYOUNG;LEE, JEON IL |
分类号 |
H01L21/20;H01L21/02 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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