发明名称 |
PUNCHED TYPE GRIDE IMPROVED ACTIVE MATERIAL COHERENCE |
摘要 |
The present invention has a purpose for providing a punched type substrate structure improving active material coherence by processing roughness on the surface of the substrate and configuring a wire shape as a polygon, comprising an upside frame having a lug on one side; a downside frame; a side frame connecting the upside frame to the downside frame in sides; and a plurality of meshes which are made for connecting vertical wires which move forward in a radical shape centering on the lug of the upper frame inside of the substrate and horizontal wires which connects the side frames to each other. The surface of the vertical wire or the horizontal wire is made in a polygon shape, improving active material cohesion and providing the punched type substrate of the storage battery with the same. |
申请公布号 |
KR20140095632(A) |
申请公布日期 |
2014.08.04 |
申请号 |
KR20130007954 |
申请日期 |
2013.01.24 |
申请人 |
GLOBAL BATTERY CO., LTD. |
发明人 |
KIM, HUI JUNG;KIM, SANG DONG;PARK, DO YUL |
分类号 |
H01M4/80;H01M4/02;H01M4/14;H01M4/68 |
主分类号 |
H01M4/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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