| 摘要 |
In a semiconductor device and a manufacturing method thereof, a semiconductor device comprises a first nanowire pattern provided to be spaced apart from an upper surface of a substrate in a first region, including a semiconductor material, having a first width in a horizontal direction in a cross-section thereof, and having a first vertical length in a vertical direction, a second nanowire pattern provided to be spaced apart from an upper surface of a substrate in a first region, including a semiconductor material, having the first width in a horizontal direction in a cross-section thereof, and having a second vertical length shorter than the first vertical length in the vertical direction, a first MOS transistor provided in the first nanowire pattern, and a second MOS transistor provided in the second nanowire pattern. Thus, the semiconductor device includes the first and second MOS transistors having intended ON current characteristics. |
