| 摘要 |
To provide a semiconductor device capable of realizing higher signal processing speed and ensuring a certain communication distance, and a method for manufacturing the semiconductor device even when a semiconductor thin film formed over a substrate is used. In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film. |
