发明名称 INGOT GROWING CONTROLLER AND INGOT GROWING APPARATUS WITH IT
摘要 The present invention relates to an ingot growth controller capable of precisely controlling the diameter of an ingot, by swiftly providing temperature conditions according to variable growth rate of the ingot; and to an ingot growing apparatus having the same. According to an embodiment, raw materials are heated into a molten solution status contained in a crucible using a heater, and the ingot is grown from the molten solution contained in the crucible to have a target diameter. The provided ingot growing apparatus includes: an auto diameter controller for controlling the rising rate of the ingot in accordance with an error derived from the target diameter and real diameter; and a high resolution controller for calculating heater power in accordance with the rising rate of the ingot and transmitting the heater power to the heater in a pulse signal.
申请公布号 KR20140095329(A) 申请公布日期 2014.08.01
申请号 KR20130008175 申请日期 2013.01.24
申请人 LG SILTRON INCORPORATED 发明人 PARK, HYUN WOO;KIM, SE HUN
分类号 C30B15/20;C30B29/06;H01L21/02 主分类号 C30B15/20
代理机构 代理人
主权项
地址