发明名称 PROCESS FOR PRODUCTION OF MULTICRYSTAL SILICON AND FACILITY FOR PRODUCTION OF MULTICRYSTAL SILICON
摘要 A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiH n Cl 4-n , wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes; and supplying the remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400°C to convert silicon tetrachloride into trichlorosilane and the polymer into monosilanes.
申请公布号 KR101426099(B1) 申请公布日期 2014.08.01
申请号 KR20097000245 申请日期 2007.10.26
申请人 发明人
分类号 C01B33/035;C30B29/06 主分类号 C01B33/035
代理机构 代理人
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