THIN-FILM TRANSISTOR STRUCTURE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

摘要

A thin-film transistor structure comprising a first metal layer (10). An insulation layer (20) is arranged on the first metal layer (10). An active layer (60) of an indium-gallium-zinc oxide material is arranged on the surface of the insulation layer (20) at a corresponding area directly above the first metal layer (10). A second metal layer (30) is laid on the surface of the active layer (60). A notch (64) is provided on the upper surface of the second metal layer (30) at the active layer (60). A groove (70) is provided at on the upper surface of the active layer (60) at the area of the notch (64).