MEMORY ARRAY HAVING SEMICONDUCTOR STRUCTURE WHICH ARE ADJACENT TO EACH OTHER AND SUBSTANTIALLY VERTICAL, AND FORMATION OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a memory array, and a method for forming the same.SOLUTION: One memory array has memory cell strings formed so as to be adjacent to semiconductor structures 455 which are separated from each other, are substantially vertical, and are adjacent to each other, and the separated semiconductor structure connects memory cells 472 of each of the strings in series. Two dielectric pillars 445 may be formed of a dielectric formed in a single opening. Each of the dielectric pillars has a pair of memory cell strings which are adjacent to the dielectric pillars. At least one memory cell out of one upper string out of one pillar, and at least one memory cell out of the upper string out of the other pillar are connected to an access line 480 in common.