METHODS OF MANUFACTURING NAND FLASH MEMORY DEVICES

摘要

A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction

主权项

1. A semiconductor memory device comprising:
a substrate; a plurality of parallel first conducive lines on the substrate, wherein the plurality of parallel first conductive lines extends in a first direction on a memory cell region and on a contact region of the substrate; and a plurality of parallel second conductive lines on the contact region of the substrate, wherein the plurality of parallel second conductive lines extends in a second direction different than the first direction, wherein each of the second conductive lines is connected to a respective one of the first conductive lines, wherein a first one of the second conductive lines is between a second one of the second conductive lines and the memory cell region, and wherein a length of the first one of the second conductive lines is less than a length of the second one of the second conductive lines.