| 摘要 |
<p>This semiconductor device comprises: a plurality of first element-separating regions formed on a semiconductor substrate so as to extend along a first direction (Y direction); a plurality of second element-separating regions formed so as to extend along a second direction (X direction) that intersects with the first direction (Y direction); a plurality of active regions insulated and separated by the first element-separating regions and the second element-separating regions; a plurality of gate electrodes (word lines) formed so as to extend along the first direction (Y direction); and an embedded diffusion layer that is formed in a position deeper than the first element-separating regions and the second element-separating regions, and that has an inverse characteristic to the active regions.</p> |
