发明名称 |
LOW POWER STATIC RANDOM ACCESS MEMORY |
摘要 |
<p>A bit line driver for a static random access memory (SRAM) cell including; a first voltage supply for supplying a first voltage; a second voltage supply for supplying a second voltage that is less than the first voltage; a write circuit to drive a bit line and an inverse bit line when writing to the SRAM cell; and a pre-charge circuit to pre-charge the bit line and the inverse bit line before reading the content of the SRAM cell. The bit line driver supplies a voltage less than the first voltage by a threshold voltage of one transistor to the bit line or the inverse bit line when the bit line driver drives the bit line or the inverse bit line to a high state.</p> |
申请公布号 |
WO2014116612(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
WO2014US12403 |
申请日期 |
2014.01.21 |
申请人 |
RAYTHEON COMPANY |
发明人 |
HARRIS, MICKY;KHALED, WASIM |
分类号 |
G11C11/412;G11C11/418 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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