SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which the on-resistance can be reduced effectively while using an SiC semiconductor, and to provide a method of manufacturing the same.SOLUTION: A plurality of P-type wells 23 are formed at intervals on an N-type SiC semiconductor substrate 20. In the internal region of the P-type well 23, an N-type source layer 26 is formed. A gate electrode 25 is formed on the semiconductor substrate 20 so as to straddle adjoining P-type wells 23, while interposing a gate insulating film 24. A first N-type impurity diffusion layer 41 is formed in the region between adjoining P-type wells 23. In the P-type well 23, a second N-type impurity diffusion layer 42 is formed so as to protrude from the N-type source layer 26 to the first N-type impurity diffusion layer 41 side, while overlapping the N-type source layer 26. A channel region 35 is formed between the first and second N-type impurity diffusion layers 41, 42.