发明名称 Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
摘要 A substrate processing apparatus includes a process chamber in which a substrate is accommodated; a source gas supply system configured to supply a source gas onto the substrate; first and second reactive gas supply systems configured to supply a reactive gas onto the substrate via first and second interconnected reactive gas supply pipes, wherein a gas storage unit is installed at the second reactive gas supply pipe to store the reactive gas and the reactive gas is supplied onto the substrate via the gas storage unit; and a control unit configured to control the source gas supply system to supply the source gas onto the substrate and to control the first and second reactive gas supply systems to supply the reactive gas onto the substrate via the first and second reactive gas supply pipes.
申请公布号 US2014213069(A1) 申请公布日期 2014.07.31
申请号 US201414162318 申请日期 2014.01.23
申请人 Hitachi Kokusai Electric Inc. 发明人 Takebayashi Yuji;Shimada Masakazu;Morikawa Atsushi
分类号 H01L21/67;H01L21/02 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate processing apparatus comprising: a process chamber in which a substrate is accommodated; a source gas supply system configured to supply a source gas onto the substrate; a first reactive gas supply system configured to supply a reactive gas onto the substrate via a first reactive gas supply pipe; a second reactive gas supply system configured to supply the reactive gas onto the substrate via a second reactive gas supply pipe connected to the first reactive gas supply pipe and via a gas storage unit installed at the second reactive gas supply pipe and configured to store the reactive gas; and a control unit configured to control the source gas supply system to supply the source gas onto the substrate and to control the first reactive gas supply system and the second reactive gas supply system to supply the reactive gas onto the substrate via the first reactive gas supply pipe and the second reactive gas supply pipe.
地址 Tokyo JP