| 摘要 |
<p>Provided is a Schottky barrier diode that is capable of preventing an increase in a forward voltage and an increase in a contact resistance with an ohmic electrode layer even when a reverse withstand voltage is increased. The Schottky barrier diode (1) is provided with: an n-type semiconductor layer (3) comprising Ga 2 O 3 -based compound semiconductors with n-type conductivity; and a Schottky electrode layer (2) which is in Schottky-contact with the n-type semiconductor layer (3). An n - -type semiconductor layer (31), which has a relatively low electron carrier concentration and is brought into Schottky-contact with the Schottky electrode layer (2), and an n + semiconductor layer (32), which has a higher electron carrier concentration than the n - semiconductor layer (31), are formed in the n-type semiconductor layer (3).</p> |
