| 摘要 |
Methods for forming CMOS integrated circuit structures are provided. The methods comprise performing a first implantation process for performing at least one of a halo implantation and a source and drain extension implantation into a region of a semiconductor substrate and then forming a stressor region in another region of the semiconductor substrate. Furthermore, a semiconductor device structure is provided, the structure comprising a stressor region embedded into a semiconductor substrate adjacent to a gate structure, the embedded stressor region having a surface differing along a normal direction of the surface from an interface by less than about 8 nm, wherein the interface is formed between the gate structure and the substrate. |
