METHOD AND APPARATUS FOR AMELIORATING PERIPHERAL EDGE DAMAGE IN MAGNETORESISTIVE TUNNEL JUNCTION (MTJ) DEVICE FERROMAGNETIC LAYERS

摘要

An in-process magnetic layer having an in-process area dimension is formed with a chemically damaged region at a periphery. At least a portion of the chemically damaged region is transformed to a chemically modified peripheral portion that is non-ferromagnetic. Optionally, the transforming is by oxidation, nitridation or fluorination, or combinations of the same.

主权项

1. A method for forming a magnetic tunnel junction layer:
forming an in-process ferromagnetic layer having a ferromagnetic main region surrounded by a chemically damaged peripheral region, wherein the chemically damaged peripheral region is weak ferromagnetic; and transforming at least a portion of the chemically damaged peripheral region to a chemically modified peripheral portion to form the magnetic tunnel junction layer, wherein the chemically modified peripheral portion is non-ferromagnetic.