ESD-Protection Circuit for Integrated Circuit Device

摘要

A double-diffused metal oxide semiconductor (DMOS) structure is configured as an open drain output driver having electrostatic discharge (ESD) protection and a reverse voltage blocking diode inherent in the structure and without requiring metal connections for the ESD and reverse voltage blocking diode protections.

主权项

1. An open drain output driver cell having electro-static discharge protection, comprising:
an N− well; a first P− body diffused in the N− well, wherein the first P− body comprises a first P+ diffusion and a first N+ diffusion; a second P− body diffused in the N− well, wherein the second P− body comprises a second P+ diffusion and a second N+ diffusion; a first gate and a first insulating oxide over a portion of the first P-body and a portion of the N− well, wherein the first gate provides for control of the output driver cell; a second gate and a second insulating oxide over a portion of the second P-body and a portion of the N-well; the first P+ diffusion and the first N+ diffusion are connected together to provide a source and body contact for the output driver cell; and the second P+ diffusion, the second N+ diffusion and the second gate are connected together to provide a drain for the output driver cell; wherein an electro-static discharge (ESD) and reverse voltage protection diode is formed between the first and second P− bodies.