Reverse Blocking Semiconductor Device, Semiconductor Device with Local Emitter Efficiency Modification and Method of Manufacturing a Reverse Blocking Semiconductor Device

摘要

A reverse blocking semiconductor device includes a base region of a first conductivity type and a body region of a second, complementary conductivity type, wherein the base and body regions form a pn junction. Between the base region and a collector electrode an emitter layer is arranged that includes emitter zones of the second conductivity type and at least one channel of the first conductivity type. The channels extend through the emitter layer between the base region and the collector electrode and reduce the leakage current in a forward blocking state.

主权项

1. A reverse blocking semiconductor device, comprising:
a collector electrode; a base region of a first conductivity type and a body region of a second complementary conductivity type, the base and body regions forming a pn junction; and an emitter layer arranged between the base region and the collector electrode and comprising emitter zones of the second conductivity type and a channel of the first conductivity type, the channel extending through the emitter layer between the base region and the collector electrode.