| 发明名称 |
CHEMICAL-MECHANICAL POLISHING COMPOSITION CONTAINING ZIRCONIA AND METAL OXIDIZER |
| 摘要 |
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer. |
| 申请公布号 |
US2014209566(A1) |
申请公布日期 |
2014.07.31 |
| 申请号 |
US201313754413 |
申请日期 |
2013.01.30 |
| 申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
Fu Lin;Grumbine Steven;Stender Matthias |
| 分类号 |
C09G1/02 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chemical-mechanical polishing composition comprising:
(a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer. |
| 地址 |
Aurora IL US |
