INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES

摘要

A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.

主权项

1. A method of fabricating electrical connections in an integrated MEMS device comprising:
forming a MEMS wafer comprising:
forming one or more cavities in a first semiconductor layer;bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer;etching at least one via through the second semiconductor layer and the dielectric layer;depositing a conductive material on the second semiconductor layer and filling the at least one via;patterning and etching the conductive material to form at least one standoff;depositing a germanium layer on the conductive material;patterning and etching the germanium layer;patterning and etching the second semiconductor layer to define one or more MEMS structures; and bonding the MEMS wafer to a base substrate using a eutectic bond between the germanium layer on the one or more standoffs and aluminum pads of the base substrate.